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SEMICONDUCOTR RESEARCH PAPER-1

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A srivani
Vasireddy Venkatadri Institute of Technology, Guntur

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INFLUENCE OF CONCENTRATION IN INPXAS1-X OPTICAL PROPERTY OF TERNARY SEMICONDUCTOR ALLOY Vedam RamaMurthy1 and Alla Srivani2 1 Professor, HOD, Department of Physics & Electronics TJ PS College, Andhra Pradesh 2 Assistant Professor in Physics & Electronics, Department of Nano Biotechnology, Acharya Nagarjuna University, Andhra Pradesh Email: allasrivani@gmail.com ABSTRACT An essential issue in developing semiconductor devices for Opto electric is to design materials with appropriate band gaps plus the proper positioning of dopant levels relative to the bands. Ternary Semiconductor alloys provide a natural means of tuning the magnitude of the Optical properties for wide application of Semiconductor devices. The need to provide materials for applications in the long-wavelength range for infrared detectors has led to the development of III-V Ternary alloys of InPxAs1-xTernary Semiconductor. InPxAs1-x III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds InP and InAs by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the InPxAs1-x III-V Ternary Semiconductor Optical constant values. Our results agree well with the available data in the literature. Keywords: Arsenic, Alloys, Band Energy Gaps, Band Gap Engineering, Binary Semiconductors, Composition, Optical constants, Doping, Optical properties, Indium, Phosphorus, Ternary Semiconductor alloys. INTRODUCTION In the present work, the solid solutions belonging to InPxAs1-x III-V Ternary Semiconductor Optical properties and application have been investigated. Doping of P component in a Binary semiconductor like InAs and changing the composition of do pant has actually resulted in modifying optical properties with enhancing Optical applications. Thus effect of do pant tunes all optical properties and finds extensive applications in Semiconductor LASERS. The present investigation relates with variation of composition for VOLUME NO.1, ISSUE NO.11 ISSN 2277-1174 20

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